EXAMINE THIS REPORT ON N TYPE GE

Examine This Report on N type Ge

s is always that on the substrate material. The lattice mismatch contributes to a considerable buildup of strain Strength in Ge layers epitaxially developed on Si. This strain Strength is largely relieved by two mechanisms: (i) generation of lattice dislocations on the interface (misfit dislocations) and (ii) elastic deformation of both equally the

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